smd type transistors 1 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter www.kexin.com.cn silicon npn triple diffusion planar type 2SC5063 features high-speed switching high collector to base voltage v cbo wide area of safe operation (aso) absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 500 v v ces 500 v v ceo 400 v emitter to base voltage v ebo 7v peak collector current i cp 3a collector current i c 1.5 a base current i b 0.5 a collector power dissipation tc=25 25 ta=25 1.3 junction temperature t j 150 storage temperature t stg -55to+150 p c w collector to emitter voltage electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 500v, i e =0 100 a emitter cutoff current i ebo v eb =5v,i c =0 100 a collector to emitter voltage v ceo i c = 10ma, i b =0 400 v v ce =5v,i c =0.1a 15 v ce =5v,i c =0.8a 8 collector to emitter saturation voltage v ce(sat) i c =0.8a,i b =0.16a 1 v base to emitter saturation voltage v be(sat) i c =0.8a,i b =0.16a 1.5 v transition frequency f t v ce =10v,i c =0.2a,f=10mhz 25 mhz turn-on time t on i c =0.8a,i b1 =0.16a,i b2 = -0.32a, 0.7 storage time t stg v cc = 150v 2 fall time t f 0.3 s h fe forward current transfer ratio
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